| New Product ‘lllvvlsHM ____________________________§§EE§E￡￥EE§E7 Vishay General SemiconductorLow VF High Current Density Surface MountSchottky Barrier Rectifiers FEATURES --/e-ESMP Se”eS - very low profile — typical height of 1.1 mm Au:l:,"iif:l.iE“”V’E ? . K - Ideal for automated placement ?- Low fonivard voltage drop, low power losses - High eriiciency RoHs 1 Low thermal resistance :i':‘::;“:; 2 Meets MSL level 1, per J—STD—020, FREELF maximum peak of 260 °C AEC-Q101 qualified A M -compliant to FtoHs Directive 2002/95/EC and ing—H—|:: We accordanceto WEEE 2002/96/ECCathodeW22 - Halogen-free according to IEC 61249-2-21 definition To—277A (SMPC) PRIMARY cHARAcTERIsTIcs MEcHANIcAL DATAcase: To—277A (SMPC)Molding compound meets UL 94 V-0 flammability ratingBase P/N-M3 - halogen-free, RoHS compliant, andM C°mmer°ia' WadeBase P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test, HM3 suffixTYPICAL APPLICATIONS meets JESD 201 class 2 whisker test For use in low voltage high frequency inverters,freewheeling, DC/DC converters, and polarity protection applications. MAx|MuM RATmes (TA = 25 0C unless othemise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average fonlvard rectified current (fig. 1) superimposed on rated load Non-repetitive avalanche energy at IAS : 2.0 A, TJ: 25 “C Peak forward surge current 10 ms single half sine-wave -55to1-150 Operating junction and storage temperature rangeDocument Number: 88987 For technical questions within your region, please contact one of the following: www.visnay.com Revision: 19-Apr-11 DlodesAmencas@vishav.com, DlodesAsia@vlstiav_com, D|odesEuroge@vlshav_com 1 This document is sublect to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vlshav_com/doc?91000 |